Nanoparticle Engineering for Chemical-Mechanical Planarization Fabrication of Next-Generation Nanodevices
Materialtyp:
ArtikelUtgivningsinformation: Taylor & Francis CRC Press [Imprint] 2019Beskrivning: 1 electronic resource (224 p.)Innehållstyp: - text
- computer
- online resource
- 9780367446062
- 9780429291890
- 9781000006544
- 9781000013368
- 9781000019889
- 9781000023220
- 9781000023299
- 9781000023367
- 9781420059113
- Mathematics and Science
- Technology, Engineering, Agriculture, Industrial processes
- Industrial chemistry and manufacturing technologies
- Industrial chemistry and chemical engineering
- Mechanical engineering and materials
- Materials science
- Energy technology and engineering
- Electrical engineering
- Electronics and communications engineering
- Electronics engineering
- Abrasive Particles
- CMP Process
- Ceria Particles
- Contact Angle
- Electrokinetic Behavior
- Film Thickness Variation
- Higher Removal Rate
- NAND Flash Memory
- Nano Fumed Silica Particle
- Nitride Film
- Oxide Film
- PAA Chain
- PAA Concentration
- PAA Layer
- PAA Solution
- PVP
- PVP Polymer
- Pattern Density
- Polishing Rate
- Poly Si
- Poly Si Film
- Pram
- Removal Depth
- Removal Rate
- pH Iep
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In the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phone, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progressively becomes perceived less as black art and more as a cutting-edge technology, it is emerging as the technology for achieving higher performance devices. Nanoparticle Engineering for Chemical-Mechanical Planarization explains the physicochemical properties of nanoparticles according to each step in the CMP process, including dielectric CMP, shallow trend isolation CMP, metal CMP, poly isolation CMP, and noble metal CMP. The authors provide a detailed guide to nanoparticle engineering of novel CMP slurry for next-generation nanoscale devices below the 60nm design rule. They present design techniques using polymeric additives to improve CMP performance. The final chapter focuses on novel CMP slurry for the application to memory devices beyond 50nm technology. Most books published on CMP focus on the polishing process, equipment, and cleaning. Even though some of these books may touch on CMP slurries, the methods they cover are confined to conventional slurries and none cover them with the detail required for the development of next-generation devices. With its coverage of fundamental concepts and novel technologies, this book delivers expert insight into CMP for all current and next-generation systems.
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eng
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